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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
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THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thCS
R thJC
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
3.0
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
V GS = ± 20 V
V DS = max. rating, V GS = 0 V
V DS = 0.8 x max. rating, V GS = 0 V, T J = 125 °C
- 50
- 2.0
-
-
-
-
-
-
-
-
-
- 4.0
± 500
250
1000
V
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = - 10 V
I D = 5.7 A b
-
0.20
0.28
?
Forward Transconductance
g fs
V DS ? - 50 V, I DS = - 5.7 A
2.3
3.5
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
490
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = - 25 V,
f = 1.0 MHz, see fig. 9
I D = - 9.7 A, V DS = 0.8 x max.
-
-
-
320
70
9.4
-
-
14
pF
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V GS = - 10 V
rating, see fig. 18
(Independent operating
temperature)
-
-
4.3
4.3
6.5
6.5
nC
Turn-On Delay Time
t d(on)
-
8.2
12
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 25 V, I D = - 9.7 A,
R g = 18 ? , R D = 2.4 ? , see fig. 17
(Independent operating temperature)
-
-
-
57
12
25
66
18
38
ns
Internal Drain Inductance
L D
Between lead,
D
-
4.5
-
Internal Source Inductance
L S
6 mm (0.25") from
package and center of
die contact.
G
-
7.5
-
nH
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
- 9.9
- 40
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = - 9.9 A, V GS = 0 V b
T J = 25 °C, I F = - 9,7 A, dI/dt = 100 A/μs b
-
56
0.17
-
110
0.34
- 6.3
280
0.85
V
ns
nC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
S13-0169-Rev. D, 04-Feb-13
2
Document Number: 90350
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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